Eddy Kunnen - Publications

Phd&Master

Phd - Thesis Anisotropy-Induced Magnetic Properties of Layered structures and Arrays, Katholieke Universiteit Leuven 2000, sponsored by IWT

Master - De invloed van bestraling en uitgloeiing op de eigenschappen van een Fe/Ag superrooster
Eddy Kunnen
Licentiaatsverhandeling, Katholieke Universiteit Leuven, 1995

Master in Project Management : The organization of a course on dry etching
Master thesis Eddy Kunnen, XIOS hogeschool Limburg, 2012

Journals

28 2D and 3D photoresist line roughness characterization
A.V. Pret, E. Kunnen, R. Gronheid, E. Pargon, O. Luere, D. Bianchi in Microelectronic Engineering, Vol. 110, p. 100-107 (2013)

27 Study of SF6/N2O microwave plasma for surface texturing of multi-crystalline(<150Aum) solar cells
B.T. Chan, E. Kunnen, U. Matthias, J.F de Marneffe, K. Xu, W. Boullart, B. Rau, J. Poortmans in Japanese Journal of Applied Physics, Volume 51, Issue 10, p. 10NA01 (2012)

26 Enabling interconnect scaling with spacer-defined double patterning (SDDP)
Y.K. Siew, M. Stucchi, J. Versluijs, P. Roussel, E. Kunnen, M. Pantouvaki, G. Beyer, Z. Tokei in Microelectronic Engineering, In Press (2013)

25 2-steps plasma texturing process for multi-crystalline silicon solar cells with linear microwave plasma sources
B.T. Chan, E. Kunnen, K. Xu, W. Boullart, J. Poortmans in IEEE journal of Photovoltaics, Vol. 3, Iss. 1, p152-158 (2013)

24 Saturation of front propagation in a reaction-diffusion process describing plasma damage in porous low-k material
S. Safaverdi, G. Barkema, E. Kunnen, A. Urbanowicz, C. Maes in Physical Review B, Vol. 83 (24), p. 245320, 2011

23 Active species in porous media: Random walk and capture in traps
V.E. Arkhincheev a, E. Kunnen b, M.R. Baklanov, Microelectronic Engineering 88 (2011) 694–696

22 Integrated diffusion - recombination model for describing the logarithmic dependency of plasma in porous low-k materials.
Kunnen. E., Barkema G., Maes C., Shamiryan D., Urbanowicz A., Struyf H., Baklanov M. R., Microelectronic Engineering, Microelectronic Engineering 88 (2011) 631–634

21 Effect of Energetic Ions on plasma damage of SiOCH low-k material
E. Kunnen , M.R. Baklanov, A. Franquet, D. Shamiryan, T.V. Rakhimova, A.M. Urbanowicz, H. Struyf, W. Boullart, Journal of Vacuum Science and Technology B (28)(3), p.450-459 2010,

20 Effect of Top power on a low-k film during oxygen strip in a TCP chamber
E. Kunnen, T.V. Rakhimova, D. Shamiryan, H. Struyf, W. Boullart and M.R. Baklanov, Microelectronic Engineering; Volume 87, Issue 3, March 2010, p462-465

19 Spacer defined FinFet : Active Area patterning of sub-20 nm Fins with high density,
Degroote, B.; Rooyackers, R.; Vandeweyer, T.; Collaert, N.; Boullart, W.; Kunnen, E.; Shamiryan, D.; Wouters, J.; Van Puymbroeck, J.; Dixit, A. and Jurczak, M., Microelectronic Engineering 84 , p609-618 (2007)

18 Independent double-gate FinFets with asymmetric gate stacks
Masahara, M.; Surdeanu, R.; Witters, L.; Doornbos, G.; Nguyen Hoang, V.; Van den Bosch, G.; Vrancken, C.; Devriendt, K.; Neuilly, F.; Kunnen, E.; Suzuki, E.; Jurczak, M. and Biesemans, S., Microelectronic Engineering (2007)

17 Solid Phase epitaxy versus random nucleation and growth in sub-20 nm wide field-effect transistors
Duffy, R.; Van Dal, M.; Pawlak, B.; Kaiser, M.; Weemaes, R.; Degroote, B.; Kunnen, E. and Altamirano Sanchez, E., Applied Physics Letters 90, p241912 (2007)

16 Demonstration of Assymmetric Gate-Oxide thickness 4-terminal FinFETs,
Masahara, M.; Surdeanu, R.; Witters, L.; Doornbos, G.; Nguyen Hoang, V.; Van den Bosch, G.; Vrancken, C.; Devriendt, K.; Neuilly, F.; Kunnen, E.; Jurczak, M. and Biesemans, S., IEEE Electron Device Letters, Vol28, No. 3, p. 217 (March 2007)

15 Immersion lithograpy using a dual-function BARC
Op de Beeck, M.; Sleeckx, E.; Jaenen, P.; Kunnen, E. and Yeh, W., Microlithography World, December, O1 (2006)

14 On the use of SiGe spike in the emitter to improve the fT x BVCEO product of high-speed SiGe HBTs
Choi, L.; Van Huylenbroeck, S.; Piontek, A.; Sibaja-Hernandez, A.; Kunnen, E.; Meunier-Beillard, P.; van Noort, W.; Hijzen, E. and Decoutere, S., IEEE Electron Device Letters, Vol 28, p.270 (2007)

13 Introduction of airgap deeptrench isolation in STI module for High Speed SiGe : C BiCMOS Technology,
Kunnen, E.; Choi, L.; Van Huylenbroeck, S.; Piontek, A.; Vleugels, F.; Dupont, T.; Devriendt, K.; Shi, X.; Vanhaelemeersch, S. and Decoutere, S. MRS Spring, San Francisco, USA, Apr. 2006. 0913-D04-01

12 The etchback approach: enlarged process window for MuGFET gate etching
Degroote, B.; Collaert, N.; Rooyackers, R.; Baklanov, M.; Boullart, W.; Kunnen, E.; Jurczak, M. and Vanhaelemeersch, S. Microelectronic Engineering, Vol. 83 (3), pp.570-576, 2006

11 Optimization of low temperature silicon nitride processes for improvement of device performance
E. Sleeckx, M. Schaekers, X Shi, Kunnen, E., B. Degroote, M. Jurczak, M. de Potter de ten Broeck, E. Augendre, Microelectronic Reliability 45, p865 (2005)

10 Observation of the bulk spin-flop transition in Fe/Cr superlattice
L. Bottyan, L. Deak, J. Dekoster, Kunnen, E., G. Langouche, J. Meerschaut, M. Major, D.L Nagy, H.D. Rűter, E. Szilagyi, K. Temst, J. Magn. Magn. Mat., 240, p514-516 (2002)

9 Influence of strain on the antiferromagnetic ordering in epitaxial Cr(001) films on MgO
Kunnen, E., S. Mangin, V.V. Moshchalkov, Y. Bruynseraede, A. Vantomme, A. Hoser, K. Temst, Thin Solid Films, p 262 (2002).

8 Magnetic order and the spin-flop transition in Fe/Cr superlattices
K. Temst, Kunnen, E., V.V. Moshchalkov, H. Meletta, H. Fritzsche, Y. Bruynseraede, Physice B 276-278, 684 (2000)

7 The magnetic structure of epitaxial Cr films on MgO
E.Kunnen, K. Temst, V.V. Moshchalkov, Y. Bruynseraede, S. Mangin, A. Vantomme, A. Hoser, Physica B 276-278 (2000) p. 738-739

6 Structure of Ag/Fe superlattices probed at different length scales
G. Gladyszewski, K. Temst, K. Mae, R. Schad, Kunnen, E., G. Verbanck, Y. Bruynseraede,Thin
Solid films, 366, 51-62 (2000)

5 Characterization of granular Ag films grown by low-energy cluster beam deposition
W. Bouwen, Kunnen, E., K. Temst, P. Thoen, M.J. Van Bael, F. Vanhoutte, H. Weidele, P. Lievens and R. E. Silverans, Thin Solid Films 354, 87-92 (1999)

4 Coupling and Magnetoresistance in Co/Cr/Ag/Co structures
Kunnen, E., F.G. Aliev, K. Temst, G. Verbanck, K. Mae, M.J. Van Bael, J. Barnas, V.V. Moshchalkov and Y. Bruynseraede in V.G. Bar’yakhtar et al. (eds.), Frontiers in Magnetism of Reduced Dimension Systems, 501-506 (1998)

3 Periodic enhancement of the Electron-Electron Interactions and the Magnetoresistance in Magnetic Co/(Cr/Ag)/Co Multilayers
F.G. Aliev, E.Kunnen, K.Temst, K. Mae, G. Verbanck, J. Barnas, V.V. Moshchalkov, and Y. Bruynseraede
Phys. Rev. Lett. 78 , p. 134-137 (1997)

2 Epitaxially grown Ag(001)/Fe(001) superlattices
G. Gladyszewski, K. Temst, R. Schad, P. Beliën, Kunnen, E., G. Verbanck, Y. Bruynseraede
Thin Solid Films 275, p. 180-183 (1996)

1 Modification of structure, electric and magnetic properties of epitaxially grown Ag(001)/Fe(001) superlattices
G. Gladyszewski, J. Barnás, K. Temst, G. Verbanck, R. Schad, P. Beliën, Kunnen, E., F. Bodart, Y. Bruynseraede
Journal of Magn. and Magn. Mat. 156, p.381-382 (1996)

Conferences

71 Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
H. Mertens, R. Ritzenthaler, A. Chasin, T. Schram, E. Kunnen, A. Hikavyy, L. A. Ragnarsson, H. Dekkers, T.Hopf, K. Wostyn, K. Devriendt, S.A. Chew, M.S. Kim, Y. Kikuchi, E. Rosseel, G. Mannaert, S. Kubicek, S. Demuynck, A. Dangol, N. Bosman, J. Geypen, P. Carolan, H. Bender, K. Barla, N. horiguchi, D. Mocuta, Electron Devices Meeting (IEDM), 2016 EIII International.

70 N7 middle of line etch challenges and solutions
E. Kunnen, M. Brouri, S. Demuynck, J. Versluijs, J. Boemmels, J. Ryckaert, Plasma Etch and Strip in Microtechnology, Leuven, April 2015

69 A way to integrate multiple block layers for middle of line contact patterning
E. Kunnen, S. Demuynck, M. Brouri, J. Boemmels, J. Versluijs, J. Ryckaert, SPIE advanced lithography, San Jose, California February 2015

68 N10 Logic Patterning
K. Xu, Z. Tao, H. Hubert, G. Mannaert, E. Kunnen, M. Mao, F. Lazzerino, S. Decoster, China Semiconductor Technology International Conference 2014, March 16-17th, 2014, Shanghai

67 Contact module at dense gate pitch technology challenges
S. Demuynck, M. Mao, E. Kunnen, J. Versluijs, K. Croes, C. Wu, M. Schaekers, A. Peter, T. Kauerauf, L. Teugels, J. Bommels, IEEE International Interconnect Technology Conference/Advanced Metallization, San Jose, California, USA, May 2014

66 Dry etch challenges in EUV-based SRAM patterning (Invited)
E. Kunnen, E. Altamirano Sanchez, S. Decoster, S. Demuynck, H. Hody, M. Mao, F. Lazzerino, C. Wilson, K. Xu, Dry Process Symposium 2013, Jeju, South-Korea, August 2013

65 15nm half-pitch patterning: EUV + SELF-aligned double patterning
J. Versluijs, L. Souriau, D. Hellin, I. Orain, Y. Kimura, E. Kunnen, H. Dekkers, X. Shi, J. Albert, V. Wiaux, K. Xu, International Symposium on Extreme Ultraviolet Lithography, Brussels, Belgium september 2012

64 2D and 3D line roughness characterization
A. Vaglio Pret, R. Gronheid, E. Kunnen, E. Pargon, O. Luere and D. Bianchi, 38th International Micro & Nano Engineering Conference, Toulouse, 2012 France

63 15 nm HP patterning with EUV lithography and SADP
L. Souriau, D. Hellin, E. Kunnen, J. Versluijs, H. Dekkers, J. Albert, I. Orian, K. Yoshie, K. Xu, J. Vertomme, V. Wiaux, W. Boullart, 34th International Symposium on Dry Process, Tokyo, 2012 Japan

62 Process development using negative tone development for the dark field critical layers in a 28 nm node process
J. Versluijs, V. Truffert, G. Murdoch, P. De Bisschop, D. Trivkovic, V. Wiaux, E. Kunnen, L. Souriau, S. Demuynck, M. Ercken, Optical Microelectronica XXV, San Jose, California, February 2012, SPIE 8236, 83260W

61 Influence and evolution of 193i resist composition during VUV exposure
E. Kunnen, A. Vaglio Pret, P. Verdonck, R. Gronheid, ISPlasma Aichi Japan March 2012

60 Implementing plasma texturing process with linear microwave plasma sources for ultra-thin multigate crystalline (<150um) solar cells
B. Chan, E. Kunnen, M. Uhlig, K. Xu, W. Boullart, B. Rau, J. Poortmans, 21st International Pholotvoltaic Science and Engineering Conference Fukuoka Japan Nov. 2011

59 Development of 2-steps plasma texturing process for crystalline silicon solar cells with linear microwave plasma sources
B. Chan, E. Kunnen, D. Shamiryan, K. Xu, W. Boullart 4th International workshop on Plasma Etch and Strip in Microelectronics - PESM Mechelen Belgium, May 2011

58 Line-edge roughness (LER) correlation and dielectric reliability with spacer-defined double patterning (SDDP) at 20nm half pitch
Y. Siew, M. Stucchi, J. Versluijs; P. Roussel, E. Kunnen, M. Pantouvaki, G. Beyer, Z. Tokei, IEEE International Interconnect Technology Conference and Materials for Advanced Metallization IITC/MAM, Germany Dresden May 2011, p6.5

57 Spacer defined double patterning for (sub-) 20 nm half pitch single damascene structures
J. Versluijs, Y. Siew, E. Kunnen, D. Vangoidzenhoven, S. Demuynck, V. Wiaux, H. Dekkers,G. Beyer, Optical Microlithography XXXIV, San Jose (CA), USA, Feb 2011, proceedings SPIE Vol. 7973

56 Development, optimization and evaluation of a CF4 pretreatment process to remove unwanted interfacial layers in stacks of CVD and PECVD polycrystalline silicon-germanium for MEMS applications, Sensors, Actuators, and Microsystems (General).
G: Bryce, S. Severi, R. Vanhoof, B. Guo, E. Kunnen, A. Witvrouw, S. Decoutere, ECS Transactions Vancouver April 2010, Vol28, issue 20, p.79-90

55 Smoothening of 193 immersion Resist by 172 nm VUV exposure
Kunnen. E., Vaglio Pret A., Luere O., Azarnouche L., Pargon E., Foubert P., Gronheid R., Shamiryan D., Baklanov M.R., Boullart W., American Vacuum Society AVS2010, Albuquerque 17-22 october.

54 Spacer Defined Double Patterning for 20 nm Half Pitch Interconnect Damascene structures.
Siew Y.K., Cockburn A., Beyer G., Versluijs J., Kunnen E., Dekkers H., Volders H., Ciofi I., Gravey V., Noori A., Padhi D., Shah K., Applied Materials Engineering Technology Conference 2010

53 The small gap technique : understanding and ion-shading method for plasma surface interactions
de Marneffe J., Jarnac A., Conard T., Hendrickx D., Huffman C., Kunnen E., Lazzarino F., Milenin A., Shamiryan D., Stuyf H., Vandevorst A., Urbanowicz A. and Boullart W., 3th International Plasma Etch and Strip in Microelectronics Workshop (PESM), Grenoble, France, March 3-5th 2010

52 Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning(SDDP) on metal hard mask (MHM), Siew Y., Versluijs J., Kunnen E., Ciofi I., Alaerts W., Dekkers H., Volders H., Suhard S., Cockburn A., Sleeckx E., Van Besien E., Struyf H., Maenhoudt M., Noori A., Padhi D., Shah. K., Gravey V. and Beyer G., 13th International Interconnect Technology Conference IITC, Burlingame CA, USA, May 7-9th 2010

51 Active Species in porous media: random walk and capture in traps
Arkhincheev V., Kunnen E. and Baklanov M., 19th Materials and Advanced Metallization MAM Workshop, Mechelen, Belgium, March 7-10th 2010

50 Integrated diffusion - recombination model for describing the logarithmic time dependence of plasma damage in porous low-k materials
Kunnen E., Barkema G., Maes C., Shamiryan D., Urbanowicz A., Struyf H. and Baklanov M., 19th Materials and Advanced Metallization MAM Workshop, Mechelen, Belgium, March 7-10th 2010

49 Dry etch challenges in a 20 nm half-pitch single damascene spacer-defined patterning scheme
Kunnen E., Versluijs J., Alaerts W., Siew Y., Struyf H. and Beyer G., 3th International Plasma Etch and Strip in Microelectronics Workshop (PESM), Grenoble, France, March 3-5th 2010

48 Metal Hard-Mask Based Double Patterning for 22nm and Beyond
Struyf H., de Marneffe J., Goossens D., Hendrickx D., Huffman C., Kunnen E., Lazzarino F., Milenin A. and Boullart W., 26th Advanced Metallization Conference AMC, Baltimore MD, USA, October 13-15th 2009

47 Development, optimization and evaluation of a CF4 pre-treatment process to remove unwanted interfecial layers stacks of CVD and PECVD polycrystalline silicon germanium for MEMS applications
Bryce G., Severi S., Vanhoof R., Guo B., Kunnen E., Witvrouw A., Decoutere S., 271th Electrochemical Society ECS Conference, Vancouver, Canada, April 25th-30th 2010

46 Effect of energetic ions on plasma damage of SiOCH low-k material
Kunnen E., Urbanowicz A., Franquet A., Shamiryan D., Struyf H., Boullart W., Baklanov M., American Vacuum Society AVS 56th International Symposium and Exhibition, San Jose CA, USA, November 8-13th 2009

45 A 35 nm diameter vertical silicon nanowire short-gate tunnelFET
Vandooren A., Rooyackers R., Leonelli D., Iacopi F., De Gendt S., Verhulst A., Heyns M., Kunnen E., Nguyen D., Demand M., Ong P., Lee W., Moonens J., Richard O., Vandenberghe W. and Groeseneken G., 2009 Silicon Nanoelectronics Workshop, Kyoto Japan, June 13-14 2009

44 Effect of Top Power on low-k damage during oxygen strip in a TCP etch chamber
Kunnen E. , D. Shamyrian, H. Struyf, W. Boullart, M.R. Baklanov, 18th Material for Advanced Metallization Workshop (MAM) 2009, March 8-11 Minatec Grenoble France

43 Silicon tip formation by isotropic SF6/HBr based dry etching
Kunnen E., S. Severi, P. Verheyen, T. Dupont, R. Vanhoof, F. Vleugels, J. Heck, N. Belov, S. Decoutere, W. Boullart, Plasma Etch and Strip in Microelectronics (PESM), 2nd International Workshop, 26-27 February 2009 Leuven

42 A study of the profile of high aspect ratio structures made in silicon by Bosch type etch process
Kunnen E., S. Peeters, A. Bourgois, W. Boullart, Plasma Etch and Strip in Microelectronics (PESM), 1sth International Workshop, 10-11 september 2007 Leuven Belgium

41 Reactive Ion Etch of Si3N4 Spacers Highly Selective to Germanium,
Altamirano Sanchez, E.; Kunnen, E.; De Jaeger, B. and Boullart, W. , SiGe,Ge, and related Compounds 3:Materials, Processing and Devices (2008)

40 Reactive Ion Etch of Si3N4 spacers highly selective to Germanium,
Altamirano Sanchez, E.; Kunnen, E.; De Jaeger, B. and Boullart, W, 214th The Electral Chemical Society ECS Meeting Abstract 2384 (2008)

39 Towards the understanding of the CH3F/O2 chemistry
Altamirano Sanchez, E.; Kunnen, E. and Boullart, W., Plasma Etch and Strip in Microelectronics, 1st International Workshop, (2007)

38 Optical Emission during the plasma etch process control of the litho-etch Bias,
Altamirano Sanchez, E.; Kunnen, E. and Boullart, W, International Symposium on Semiconductor Manufacturing, PC-P-152 (2007)

37 Doubling or quadrupling MugFET Fin integration Scheme with higher pattern fidelity, lower CD variation and higher layout efficiency
Rooyackers, R.; Augendre, E.; Degroote, B.; Collaert, N.; Nackaerts, A.; Dixit, A.; Vandeweyer, T.; Pawlak, B.; Ercken, M.; Kunnen, E.; Dilliway, G.; Leys, F.; Loo, R.; Jurczak, M. and Biesemans, S. , IEEE International Solid-State Circuits Conference- ISSCC (2007)

36 Mass Metrology for controlling and understanding processes
Vecchio, E.; Kunnen, E.; Redolfi, A.; Everaert, J.; Delabie, A.; Shi, X.; Vanhaelemeersch, S.; Cunnane, L. and Kiermasz, A., 16th Annual International Symposium on Semiconductor Manufacturing (2007)

35 Cu Resistivity Scaling Limits for 20nm Copper Damascene Lines
Van Olmen, J.; List, S.; Tokei, Z.; Carbonell, L.; Brongersma, S.; Volders, H.; Kunnen, E.; Heylen, N.; Ciofi, I.; Khandelwal, A.; Gelatos, J.; Mandrekar, T. and Boelen, P., IEEE International Interconnect Technology Conference - IITC (2007)

34 A Novel Fully Self-Aligned SiGe:C HBT Architecture featuring a Single Step Epitaxial Collector-Base Process
Donkers, J.; Kramer, M.; Van Huylenbroeck, S.; Choi, L.; Meunier-Beillard, P.; Boccardi, G.; van Noort, W.; Hurkx, G.; Vanhoucke, T.; Sibaja-Hernandez, A.; Vleugels, F.; Winderickx, G.; Kunnen, E.; Peeters, S.; Baute, D.; De Vos, B.; Vandeweyer, T.; Loo, R.; Venegas, R.; Pijper, R.; Decoutere, S. and Hijzen, E., Technical Digest International Electron Devices Meeting - IEDM (2007)

33 Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Van Dal, M.; Collaert, N.; Doornbos, G.; Vellianitis, G.; Curatola, G.; Pawlak, B.; Duffy, R.; Jonville, C.; Degroote, B.; Altamirano Sanchez, E.; Kunnen, E.; Demand, M.; Beckx, S.; Vandeweyer, T.; Delvaux, C.; Leys, F.; Hikavyy, A.; Rooyackers, R.; Kaiser, M.; Weemaes, R.; Biesemans, S.; Jurczak, M.; Kottantharayil, A.; Witters, L. and Lander, R., Symposium on VLSI Technology, Digest of Technical Papers (2007)

32 A novel Isolation scheme featuring cavities in the collector for a high-speed 0.13µm SiGe:C BiCMOS technology
Choi, L.; Van Huylenbroeck, S.; Donkers, J.; van Noort, W.; Piontek, A.; Sibaja-Hernandez, A.; Meunier-Beillard, P.; Neuilly, F.; Kunnen, E.; Leray, P.; Vleugels, F.; Venegas, R.; Hijzen, E. and Decoutere, S., Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting (2007)

31 High and Hyper NA Immersion Lithograpy using Advanced Patterning Film APF
Van der Reijden, M.; Op de Beeck, M.; Sleeckx, E.; Jaenen, P.; Kunnen, E.; Degroote, B.; Yeh, W. and Schreutelkamp, R., 17th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC)(2006)

30 Enhancing 4-Terminal FinFet Performance by use of Asymmetric Gate Oxides.
Masahara, M.; Surdeanu, R.; Witters, L.; Doornbos, G.; Nguyen Hoang, V.; Van den Bosch, G.; Vrancken, C.; Devriendt, K.; Neuilly, F.; Kunnen, E.; Jurczak, M. and Biesemans, S, IEEE SOI Conference (2006)

29 Doubling or quadrupling MuGFET fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficienty
Rooyackers, R.; Augendre, E.; Degroote, B.; Collaert, N.; Nackaerts, A.; Dixit, A.; Vandeweyer, T.; Pawlak, B.; Ercken, M.; Kunnen, E.; Dilliway, G.; Leys, F.; Loo, R.; Jurczak, M. and Biesemans, S., IEDM 2006, San Francisco, USA, Dec. 2006, Metal gate/High-k twin-gate FinFETs for low-power applications R.Surdeanu et al In: IEDM 2006, San Francisco, USA, Dec. 2006.

28 A 205/275GHz fT/fmax Airgap Isolated 0.13µm BiCMOS Technology featuring on-chip High Quality Passives,
Van Huylenbroeck, S.; Choi, L.; Sibaja-Hernandez, A.; Piontek, A.; Linten, D.; Dehan, M.; Dupuis, O.; Carchon, G.; Vleugels, F.; Kunnen, E.; Leray, P.; Devriendt, K.; Shi, X.; Loo, R.; Hijzen, E. and Decoutere, S., Bipolar / BiCMOS Circuits and Technology Meeting (BCTM), Maastricht, The Netherlands, Oct. 2006.

27 A novel deep trench isolation featuring airgaps for a high-speed 0.13µm SiGe:C BiCMOS technology,
Choi, L.; Kunnen, E.; Van Huylenbroeck, S.; Piontek, A.; Sibaja-Hernandez, A.; Vleugels, F.; Dupont, T.; Leray, P.; Devriendt, K.; Shi, X.; Loo, R.; Vanhaelemeersch, S. and Decoutere, S International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA). Proceedings of Technical Papers, IEEE, Hsinchu, Taiwan, pp.88-89, Apr. 2006.

26 Introduction of airgap deeptrench isolation in STI module for High Speed SiGe : C BiCMOS Technology,
Kunnen, E.; Choi, L.; Van Huylenbroeck, S.; Piontek, A.; Vleugels, F.; Dupont, T.; Devriendt, K.; Shi, X.; Vanhaelemeersch, S. and Decoutere, S. MRS Spring, San Francisco, USA, Apr. 2006.

25 The etchback approach:enlarged process window for MuGFET gate etching
Degroote, B.; Collaert, N.; Rooyackers, R.; Baklanov, M.; Boullart, W.; Kunnen, E.; Jurczak, M. and Vanhaelemeersch, S, AVS 6th International Conference on Microelectronics and Interfaces (2005)

24 Integration challenges for multigate devices
Collaert N., Brus S., De Keersgieter A., Dixit A,.Ferain I.,Goodwin M.,Kottantharayil A., Rooyackers R., Verheyen P., Yim Y., Zimmerman P.,Beckx S.,Degroote B.,Demand M.,Kim M., Kunnen E., Locorotondo S.,Mannaert G.,Neuilly F.,Shamyrian D.,Baerts C.,Ercken M.,Laidler D.,Leys F., Loo R.,Lisoni J.,Snow J.,Vos R.,Boullart W.,Pollentier I.,De Gendt S.,De Meyer K.,Jurczak M.,Biesemans S., 2005 International Conference on Integrated Circuit Design and Technology, p187, 2005

23 Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
Meuris, M.; De Jaeger, B.; Kubicek, S.; Verheyen, P.; Van Steenbergen, J.; Lujan, G.; Kunnen, E.; Sleeckx, E.; Teerlinck, I.; Van Elshocht, S.; Delabie, A.; Lindsay, R.; Satta, A.; Schram, T.; Chiarella, T.; Degraeve, R.; Richard, O.; Conard, T.; Poortmans, J.; Winderickx, G.; Houssa, M.; Boullart, W.; Schaekers, M.; Mertens, P.; Caymax, M.; De Gendt, S.; Vandervorst, W.; Van Moorhem, E.; Biesemans, S.; De Meyer, K.; Ragnarsson, L.; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Afanasiev, V.; Stesmans, A, SiGe : Materials, Processing, and Devices. Proceedings of the 1st International Symposium (2004)

22 Triple junctions for reduced impact of offset spacer variation on CMOS device parameters Jurczak, M.; Rooyackers, R.; De Keersgieter, A.; Kunnen, E.; Henson, K.; Richard, O. and Dachs, C., Proceedings of the 34th European Solid-State Device Research Conference, p145 (2004)

21 Lateral and vertical scaling of the QSA HBT for a 0.13 mu m 200GHz SiGe:C BiCMOS technology,
Van Huylenbroeck, S.; Sibaja-Hernandez, A.; Piontek, A.; Choi, L.; Xu, M.; Ouassif, N.; Vleugels, F.; Van Wichelen, K.; Witters, L.; Kunnen, E.; Leray, P.; Devriendt, K.; Shi, X.; Loo, R. and Decoutere, S., Proceedings of the 2004 Bipolar BiCMOS Circuits and Technology Meeting,p229 (2004)

20 Requirements on CD and overlay for 200 GHz QSA SiGe:C HBs
Van Wichelen, K.; Witters, L.; Van Huylenbroeck, S.; Leray, P.; Laidler, D.; Kunnen, E. and Decoutere, S, Proceedings of the 34th European Solid State Device Research Conference, p333 (2004)

19 Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line
De Jaeger, B.; Houssa, M.; Satta, A.; Kubicek, S.; Verheyen, P.; Van Steenbergen, J.; Croon, J.; Kaczer, B.; Van Elshocht, S.; Delabie, A.; Kunnen, E.; Sleeckx, E.; Teerlinck, I.; Lindsay, R.; Schram, T.; Chiarella, T.; Degraeve, R.; Conard, T.; Poortmans, J.; Winderickx, G.; Boullart, W.; Schaekers, M.; Mertens, P.; Caymax, M.; Vandervorst, W.; Van Moorhem, E.; Biesemans, S.; De Meyer, K.; Ragnarsson, L.; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.; Afanas'ev, V.; Stesmans, A.; Meuris, M, Proceedings of the European Solid-State Device Research Conference,p189 (2004)

18 Ultra low power SiGe:C HBT for 0.18 mu m RF-BiCMOS
Xu, M.; Decoutere, S.; Sibaja-Hernandez, A.; Van Wichelen, K.; Witters, L.; Loo, R.; Kunnen, E.; Knorr, C.; Sadovnikov, A. and Bulucea, C., IEEE International Electron Devices Meeting 2003, 5.4.1-4 (2003)

17 Thin L-Shaped spacers for CMOS devices
Augendre, E.; Rooyackers, R.; de Potter de ten Broeck, M.; Kunnen, E.; Beckx, S.; Mannaert, G.; Vrancken, C.; Vassilev, V.; Chiarella, T.; Jurczak, M. and Debusschere I, Proceedings of the 33rd European Solid State Device Research. p 219 (2003)

16 Implementation of a Si-rich SiON nucleation layer for an improved selective SiGe HBT architecture,
Van Huylenbroeck, S.; Loo, R.; Decoutere, S.; Vleugels, F.; Kunnen, E.; Schaekers, M. and Caymax, M., Proceedings of the 2002 Bipolar BiCMOS Circuits and Technology Meeting, p 143 (2002)

15 Spin density waves in epitaxial Cr films on MgO
Kunnen E., K. Temst, S. Mangin, V.V. Moshchalkov, Y. Bruynseraede, A. Vantomme, A. Hoser.
Abstract en Poster op de 2nd European Conference on Neutron Scattering 1-5 september 1999, Boedapest, Hongarije

14 Spin density waves in epitaxial Cr films on MgO
Kunnen. E., K. Temst, S. Mangin, V.V. Moshchalkov, Y. Bruynseraede, A. Vantomme, A. Hoser.
Abstract en Poster op algemene vergadering van de Belgische Natuurkundige vereniging, 1999 te Brussel

13 Spin density waves in epitaxial Cr films on MgO
Kunnen E., K. Temst, S. Mangin, V.V. Moshchalkov, Y. Bruynseraede, A. Vantomme, A. Hoser. Abstract en poster first Crystallograpic symposium, Brussel (1999)

12 Spinflop transition in antiferromagnetically coupled Fe/Cr multilayers
Kunnen E., K. Temst, G. Verbanck, V.V. Moshchalkov, Y. Bruynseraede, H. Fritzsche and H. Maletta.
Abstract en Poster op 187. WE-Heraeus-Seminar : Spinabhängiger Transport, 16-18 februari 1998 te Bad Honnef, Duitsland

11 Spinflop transition in antiferromagnetically coupled Fe/Cr multilayers
Kunnen E., K. Temst, G. Verbanck, V.V. Moshchalkov, Y. Bruynseraede, H. Fritzsche and H. Maletta. Abstract en Poster op de algemene vergadering van de Belgische Natuurkundige vereniging, 19-20 mei 1998, Namen

10 Low energy cluster beam deposition of Agn and Aun clusters
W. Bouwen, S. Bouckaert, Kunnen, E., K. Temst, P. Thoen, M. Van Bael, F. Vanhoutte, G. Verbanck, A. Volodin, H. Weidele, C. Van Haesendonck, Y. Bruynseraede, P. Lievens, R. E. Silverans, 9th International Symposium on Small Particles and Inorganic Clusters, Lausanne, 1-5 September 1998

9 Low Energy Cluster Beam Deposition of Agn and Aun,
W. Bouwen, M. Van De Moer, S. Bouckaert, P. Thoen, F. Vanhoutte, H. Weidele, P. Lievens, Kunnen, E., K. Temst, M. Van Bael, G. Verbanck, Y. Bruynseraede, C. Van Haesendonck, and R. E. Silverans Abstract en Poster op de algemen vergadering van de Belgische Natuurkundige vereninging, 19-20 mei 1998 Namen

8 Periodic enhancement of the electron-electron interactions and the magnetoresistance in
magnetic Co/(Cr/Ag)/Co multilayers
Y. Bruynseraede, F.G. Aliev, Kunnen, E., K. Temst, G. Verbanck, V.V. Moshchalkov
Lezing door Y. Bruynseraede op de The March meeting of the American Physical Society, Kansas City, 1997

7 Research on metallic superlattices by synchrotron an neutron radiation
K. Temst, Kunnen, E., G. Verbanck, K. Mae, R. Schad, C. Van Haesendonck, V.V. Moshchalkov, Y. Bruynseraede, D. Bhar, J. Falta, G. Materlik, H. Fritzsche, H. Maletta, A. Hoser, H. Graf
Poster en lezing op uitnodiging door K. Temst op de Algemene Vergadering meeting van de Belgische Natuurkundige vereniging Mei 1997.

6 Coupling and Magnetoresistance in Co/Cr/Ag/Co structures
Kunnen, E., F.G. Aliev, K. Temst, G. Verbanck, K. Mae, J. Barnas, V.V. Moshchalkov, Y. Bruynseraede
Abstract en Poster NATO zomerschool Frontiers in Magnetism of Reduced Dimension Systems, Oekraïne, mei-juni 1997

5 Neutron reflectivity study of magnetic coupling in Fe/Cr superlattices
K. Temst, Kunnen, E., G. Verbanck, K. Mae, V.V. Moshchalkov, Y. Bruynseraede, H. Fritzsche, H. Maletta
Poster 16th General Conference of the CMD of the European Physical Society,KUL, augustus 1997

4 Structural and Magnetic Properties of Fe/Cr and Fe/Ag multilayers
K. Temst, G. Verbanck, K. Mae, Kunnen, E., R. Schad, G. Gladyszewski, J. Barnas, M. Hennion, V.V. Moshchalkov, C. Van Haesendonck, and Y. Bruynseraede
Abstract en Poster door K.Temst gepresenteerd op The First European Conference on Neutronscattering, Interlaken, 1996

3 Transport and Magneto-Optical studies of Co/Cr/Ag/Co structures
Kunnen, E., F.G. Aliev, K. Temst, G. Verbanck, K. Mae, J. Barnas, V.V. Moshchalkov, Y. Bruynseraede
Abstract en poster op de Algemene vergadering van de Belgische Natuurkunde Vereniging, ULB, 1996

2 Modification of structure, electric and magnetic properties of epitaxially grown Ag(001)/Fe(001) superlattices
G. Gladyszewski, J. Barnás, K. Temst, G. Verbanck, R. Schad, P. Beliën, Kunnen, E., F. Bodart, Y. Bruynseraede
Abstract en Poster gepresenteerd door G. Gladyszewski op The Second International Symposium on Metallic Multilayers in Cambridge 1995

1 Epitaxially grown Ag(001)/Fe(001) Superlattice
G. Gladyszewski, R. Schad, K. Temst, P. Beliën, Kunnen, E. and Y. Bruynseraede
Abstract en Poster door G. Gladyszewski gepresenteerd op de EMRS, Strasbourg, 1995